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Coated Wafer W-OXIDE 08/006

Code
W-OXIDE 08/006 Category:
Diameter
200mm
Material
Si
Type
P
Crystallographic Orientation
100
Dopant
B_doped
Growth Method
CZ
Grade
PRIME
Resistivity
1 - 30 Ohm.Cm
Thickness
725 ±25um
Polish
SSP
Alignment Fiducial
SSN
Coating Type
ATOX
Coating Thickness
1000nm
Other
SiN500

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