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SOI Wafer W-SOI 04/11483

Code
W-SOI 04/11483 Category:
Wafer Diameter
100mm
Material
SOI
Type
P
Crystallographic Orientation
100
Device Thickness
4 um
Growth Method
CZ
Device Resistivity
0.005 - 0.02 Ohm.Cm
BOx
2
Handle Thickness
450 um
Growth Method
CZ
Handle Resistivity
3.5 - 4 Ohm.Cm
Backside
DSP
Other
TEST

£TBC

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